Abstract

Polycrystalline Pb(Zr0.52Ti0.48 )O3 (PZT) microtubes are fabricated by a vacuum infiltration method. The method is based on repeated infiltration of precursor solution into macroporous silicon (Si) templates at a sub-atmospheric pressure. The pyrolyzed PZT tubes of a 2-?m outer diameter, extending to over 30 ?m in length were released from the template using a selective isotropic-pulsed XeF2 reactive ion etching of silicon. Free-standing microtubes, partially anchored at the bottom of the Si template, were then crystallized in pure oxygen atmosphere at 750 ?C for 2 min using a rapid thermal annealer. The perovskite phase of the final PZT tubes was confirmed by X-ray diffraction (XRD) analysis. The XRD spectrum also revealed a small amount of the pyrochlore phase in the structure and signs of possible fluoride contamination caused most likely by the XeF2 etching process. The surface morphology was examined using scanning electron microscopy. It was demonstrated that the whole surface of the pore walls was conformally coated during the repeated infiltration of templates, resulting in straight tubes with closed tips formed on the opposite ends as replicas of the pore bottoms. These high aspect ratio ferroelectric structures are suggested as building units for developing miniaturized electronic devices, such as memory storage (DRAM trenched) capacitors, piezoelectric scanners and actuators, and are of fundamental value for the theory of ferroelectricity in systems with low dimensionality.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.