Abstract
This paper reports on the patterning of a high‐aspect‐ratio aluminum‐doped zinc oxide (AZO) capacitive resonator based on the combination of the deep reactive ion etching (deep RIE) and atomic layer deposition (ALD) processes. The suspended AZO capacitive resonator is successfully demonstrated. Its resonant frequency is observed at 10.4 kHz with a quality factor (Q factor) of approximately 500 in a vacuum chamber.
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More From: IEEJ Transactions on Electrical and Electronic Engineering
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