Abstract
High-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio β-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of β-Ga2O3 and expedite the integration of one-dimensional β-Ga2O3 into future electronics, sensors, and optoelectronics.
Highlights
Gallium oxide in general and β-Ga2O3 in particular are getting more attention as exciting wide bandgap and nearly direct bandgap semiconductors (WBSes) [1–4]
Numerous studies have been conducted on the synthesis and characterization of one-dimensional (1D) and two-dimensional (2D) β-Ga2O3 [11–13] mainly via chemical reaction-based approaches such as hydrolysis, sol–gel methods, electrospinning, and the hydrothermal method [14–20]
To elongate a certain desired direction, Ga2O3 nanorods are often synthesized via the catalytic chemical vapor deposition method and laser ablation, which requires elevated temperature reactions [27,28]
Summary
Gallium oxide in general and β-Ga2O3 in particular are getting more attention as exciting wide bandgap and nearly direct bandgap semiconductors (WBSes) [1–4]. Numerous studies have been conducted on the synthesis and characterization of one-dimensional (1D) and two-dimensional (2D) β-Ga2O3 [11–13] mainly via chemical reaction-based approaches such as hydrolysis, sol–gel methods, electrospinning, and the hydrothermal method [14–20]. Among these various methods, β-Ga2O3 prepared via the hydrothermal method has been popular due to the resulting high crystallinity [21–26]. A simple and facile method is introduced to form high-aspect ratio nanorods without any surfactants or additives, which can broaden the science of β-Ga2O3 and expedite the integration of 1D β-Ga2O3 into future electronics, sensors, and optoelectronics
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