High and tunable spin current induced by magnetic–electric fields in a single-modespintronic device

Abstract

We proposed that a viable form of spin current transistor is one to be made from asingle-mode device which passes electrons through a series of magnetic–electric barriersbuilt into the device. The barriers assume a wavy spatial profile across the conduction pathdue to the inevitable broadening of the magnetic fields. Field broadening results in alinearly increasing vector potential across the conduction channel, which increases spinpolarization. We have identified that the important factors for generating high spinpolarization and conductance modulation are the low source–drain bias, the broadenedmagnetic fields, and the high number of FM gates within a fixed channel length.