High and low temperature DC electrical properties of vanadium borate glasses

Abstract

Semiconducting binary borate glass samples doped with vanadium of composition (H3BO3)1 + (V2O5)1-x where x ranging from 0.1, to 0.5 has been prepared by melt quench technique. The samples were annealed and their non-crystalline nature was confirmed by X-ray diffraction studies. Archimedes principle was adopted to measure room temperature density of the glass samples. High and low temperature DC electrical conductivity of the samples were analyzed and various polaron related parameters were investigated in the light of Mott’s SPH when T > and Mott’s VRH and Greaves VRH when T < (where Debye’s temperature). The investigations in these glass systems showed to be non-adiabatic electrical conduction. As per as above theories, the calculated activation energies, conductivities and various polaron parameters at different temperatures were compared. The detailed results of all the above parameters were discussed and which reveals that at high temperature regime Mott’s SPH model is adequate and at low temperature regime Greaves VRH model is valid to explain the variation of electrical conductivity of the glasses.Within the studied composition range it is for the first time the pure borate glasses doped with vanadium ions subjected to dc electrical conduction mechanism.