Abstract
AbstractAlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV and 2 MeV with fluences up to 1013 cm–2 in order to simulate operation in space. Hall effect measurements, dc characteristics and RF load pull measurements at 2 GHz do not reveal significant changes indicating the suitability of the transistors for reliable operation in space. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have