Abstract
AbstractAlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV and 2 MeV with fluences up to 1013 cm–2 in order to simulate operation in space. Hall effect measurements, dc characteristics and RF load pull measurements at 2 GHz do not reveal significant changes indicating the suitability of the transistors for reliable operation in space. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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