Abstract
Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reported for relaxor ferroelectric (k = 24,700 at 1 kHz).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
