High Al-content Al xGa 1− xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

Abstract

The microstructure and optical properties of Al x Ga 1− x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1− x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1− x N has been successfully grown on Si substrate.