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Abstract
Influence of metallic electrode and oxygen vacancies in MIM capacitors and MIM RRAM high κ based devices is studied. For both MIM capacitors and MIM RRAM it is shown that the electrode composition strongly influences the overall behavior of the devices and more precisely, the capacitance–voltage curve (nonlinearities) for MIM capacitors, and the switching mechanism (SET/RESET) for MIM RRAM. Best results for HfO 2 RRAM are obtained with Pt as bottom electrode instead of TiN while very low capacitance variations are observed for high work function electrodes, or more precisely electrodes with low oxygen affinity. These evolutions are related to the oxygen vacancies concentration and migration to the cathode electrode/high κ interface.
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