Abstract

A simple and low cost top–down wet chemical etching method was developed to fabricate hierarchical multi-diameter well-ordered single-crystal silicon nanowires. The procedure starts with forming single diameter silicon nanowire arrays by using nanosphere lithography and metal-assisted chemical etching of single crystal silicon wafer, which is followed by anisotropic radial etching of the wires. Successive repetitions of these etching steps result in arrays of multi-diameter single crystal nanowires. This technique can allow engineering nanowires in a hierarchical three-dimensional geometry for the development of advanced nano devices.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.