Abstract
We have investigated the photoluminescence and photoluminescence excitation spectra of several GaAs/AlAs short period superlattices. We show that the main emission line corresponds either to a direct (Γ) or pseudo-direct (X z) recombination process. The emission bands are inhomogeneously broadened and, at low temperature, excitons are localized. Under resonant excitation of the lowest exciton states with linearly polarized light, some samples exhibit a very large degree of polarization of luminescence. This is attributed to hidden anisotropy of localized exciton states. The angular dependence of the degree of polarization shows that the principal axes of the local anisotropy are directed along the [110] or [1 1 0] cristallographic axes in the (001) layer plane. This anisotropy likely originates from the microscopic properties of monolayer-thick growth steps in the superlattice.
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