Abstract
HgTe–CdTe superlattices were grown by molecular beam epitaxy on GaAs(100) substrates with CdTe buffer layers. The large (14.6%) lattice mismatch between CdTe and GaAs is relieved by a two-dimensional array of misfit dislocations with a period of 3.1 nm. X-ray diffraction, infrared transmittance, and Hall effect measurements are reported for thick (>5 μm) single crystalline superlattices.
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