Abstract
采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点。首先,以1-硫代甘油为稳定剂,在水相溶液中制备出HgTe核量子点;然后,采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层,合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点。该合成方法仅需3个步骤,具有操作简单、成本低廉的优点。实验结果显示,当反应温度为90℃、反应溶液pH为11.0、反应加热回流时间为4 min时,HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%。
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