Abstract
Electron impact dissociative excitation of HgI2 molecules producing the B2 Sigma +1/2 state of HgI has been studied in the case of low energy electrons. Using the most intense band of the (B2 Sigma +1/2-X2 Sigma +1/2) system of the HgI radical at 444 nm, emission cross sections have been measured in the electron energy range 1-100 eV. The threshold electron energy for the observation of the (B2 Sigma +1/2-X2 Sigma +1/2) emission band system has been determined to be 5.7 eV. The role of such dissociative excitation in lasing was analysed.
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