Abstract
High-performance HgCdTe photodiodes have been formed by successive growth of p- and n-type epitaxial layers on CdTe substrates via the liquid phase epitaxy technique. These diodes exhibit high resistance-area (R0 A) products at high temperatures: R0 A products of 1 and 30 Ω cm2 have been observed at 283 and 200 K, respectively, for Hg0.68Cd0.32Te (λco=4.0 μm at 200 K). The saturation current density for the grown junction photodiode at 300 K is 0.12 A/cm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
