Abstract
A High Pressure Reflux technique has been used for the determination of pressure-temperature phase diagram data for the Hg-Cd-Te system in the pressure range of 9 to 98 atm. For elemental liquid Hg, the variation of vapor pressure with temperature is found to be represented by:ln PHg(atm) = 11. 270−7, 149/T (°K) for 789 ≤ T≤1O71°K, which is in good agreement with earlier determinations. The latent heat of vaporization of Hg calculated from this expression is 14. 155 kcal/g-at. For Hg-Te binary melts, the variation of vapor pressure is also found to be in good agreement with data obtained by vapor phase spectroscopy measurements. For pseudobinary Hg1−xCdxTe melts, the vapor pressure P at the liquidus temperature varies from 33 atm for x = 0. 20 to 74 atm for x = 0. 60. For these melts, it is found that the activity of Hg, aHg = P/PHg is constant with an average value of 0. 345 ± 0. 02 0, independent of x and T. The variation of vapor pressure over the pseudobinary melts is therefore represented by:lnP(atm) = 10. 206–7, 149/T (°K), for 0≤x≤ 0. 60 and
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