Abstract
AbstractWe report the processes of fabricating monolithic 32×32 infrared detector based on (310) HgCdTe/CdTe/ZnTe/ Si photosensitive heterostructure which was grown by a molecular‐beam epitaxy technique in the free surface of ROIC cells. Optimum parameters of the technological processes were determined. The minimum temperature of preepitaxial thermal annealing in vacuum of ROIC was determined as 450 °C. The dark and photo current–voltage characteristics were measured and analyzed. A good sensitivity of diodes was observed. The product R0×A ∼ 105 Ohm×cm2. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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