HgCdTe infrared diode lasers grown by MBE

Abstract

The authors report their latest results on the fabrication and successful operation of HgCdTe infrared diode lasers. The stripe-geometry double-heterostructure lasers were grown by molecular beam epitaxy (MBE). The active layer thickness ranges between 0.9 and 1.4 mu m, and the p+ and n+ confinement layers were in situ doped up to 1018 cm-3 with arsenic and indium, respectively. Five double heterostructures were grown, all of which produced working lasers. The devices were operated under pulsed currents at temperatures between 40 and 90 K. The 77 K stimulated emission wavelengths for these lasers were 2.9, 3.4, 3.9 and 4.4 mu m. Operation at 5.3 mu m was demonstrated at 60 K. The lowest 77 K threshold current density was 419 A cm-2 which is very close to the prediction of a numerical calculation. Characterization of the devices, including, for example, temperature dependence of the threshold currents and spectral analysis, was performed and showed the characteristics of well-behaved, stable devices that operated without failure while being tested.