Abstract
Charge-coupled device action has been demonstrated for the first time in the variable bandgap alloy Hg 1−xCd x Te. 16-bit shift registers have been fabricated on 0.25 eV n-type material with a charge transfer efficiency of 0.9995. The mode of operation of these devices is described and their performance compared to simple CCD theory as applied to this narrow-gap infrared sensitive material. Supporting data on singlelevel MIS devices is presented to indicate the validity of our device analysis and the potential of this technology for future focal-plane applications.
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