Abstract
Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum are designed and produced. The scheme and topology are developed according to which matrix multiplexers with 640 × 512 elements at a pitch of 25 μm, which ensure operating modes at a clock frequency up to 10 MHz, are manufactured. Using a hybrid assembly method on indium bumps, a matrix photodetector with 640 × 512 elements at a pitch of 25 μm is produced. The best photodetector specimens are characterized by the following parameters: average NETD value 99.5%.
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