HfO2–ZrO2 Doped Silica Thin Films by XPS

Abstract

Silica thin films embedding ZrO2 and HfO2 were prepared by spin-coating on silica glass via a modified sol-gel processing. The novel synthetic route is based on the co-polymerization of two organically modified oxozirconium and oxohafnium clusters (M4O2(OMc)12 with M = Zr, Hf and OMc = OC(O)–C(CH3)=CH2)) with (methacryloxypropyl)trimethoxysilane (MAPTMS). The crystalline clusters, which are the precursors for the corresponding metal oxides (MO2) were prepared via the sol-gel route by reacting zirconium or hafnium butoxide with methacrylic acid. The copolymerization of the cluster with previously prehydrolyzed methacrylate-functionalized siloxane, allows the anchoring of the oxoclusters to the forming silica network. Thin films were prepared starting from a THF (tetrahydrofurane) solution with molar ratios Hf4O2(OMc)12: Zr4O2(OMc)12:MAPTMS of 1:1:88. After deposition, the films were annealed 3 h at 800 °C in air to promote the decomposition of the hafnium and zirconium oxoclusters to give the corresponding HfO2 and ZrO2 oxides. The obtained HfO2–ZrO2–SiO2 films resulted transparent, homogeneous and displayed a very good adhesion to the substrate. The composition of the films was investigated by secondary ionization mass spectrometry (SIMS) and x-ray photoelectron spectroscopy (XPS). The depth profiles evidenced a very homogenous distribution of both zirconium or hafnium species within the whole silica films and sharp film-substrate interfaces. As far as XPS analyses are concerned, the main XPS core-levels were analyzed for the annealed sample and the formation of hafnium and zirconium oxides was evidenced.