Abstract
The growth behavior and film quality of HfO2 deposited by Atomic Layer Deposition (ALD) using HfCl4/H2O depends on the hydroxylation of the exposed surface. In this work, we investigate the dependence of the first HfCl4 chemisorption reaction at 300{degree sign}C on the OH density of the silicon surface. We observe that the hydroxyl density, and hence the Hf deposition, on O3/H2O wet oxides depends on the initial preparation as well as on the stabilization time in the ALD reactor. A good understanding of the initial nucleation behavior is necessary since wet oxides are used in CMOS transistors as surface pre-treatment for aggressively scaled HfO2 gate dielectrics. Moreover, the HfCl4 chemisorption reaction is used to estimate the hydroxylated fraction of these surfaces by means of theoretical models. Finally, the temperature dependence of the OH density, as available in literature, is applied to gain insight in the stoichiometry of the HfCl4 chemisorption reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
