Abstract
The properties of (HFA)Cu.1,5-COD complex, being the prospective CVD-precursor for thin copper films for microelectronics, were investigated by UV (He I) photoelectron, X-ray fluorescent spectroscopy and mass-spectroscopy together with ab initio calculations in approximation of density functional theory. The detailed analysis of energy and structure of highest occupied MO's of (HFA)Cu.1,5-COD was carried out. The thermodynamical and kinetical parameters of thermolysis reaction for (HFA)Cu.1,5-COD were determined and discussed. The initial stages of growth of thin copper films on the basis of this precursor (Si 3 N 4 substrates) were studied by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy.
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