Abstract
Experimental study of wet etching of oxide in diluted HF solution is presented for different ion implantation dosage and energy. This wet etching is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the etching rate of oxide is a strong function of ion implantation dosage and energy. The oxide wet etch rate can be restored to non-implanted oxide etch rate after 30 min anneal at 700/spl deg/C. The increase of etch rate after ion implantation is attributed to the breakage of Si-O bonds.
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