Abstract
A transmission electron microscopy study on the new hexagonal silicon formed by pulsed laser beam annealing was carried out. It has been demonstrated through the use of a high-resolution transmission electron micrography and selected area electron diffraction patterns that when an amorphous silicon thin film was crystallized by a pulsed laser beam, the resulting polycrystalline matrix contained crystals which had either a diamond cubic crystal structure or a new hexagonal crystal structure with unit cell dimensions a = 0.382 nm, c = 1.024 nm, and c a = 2.68 .
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