Abstract
Hexagonal nanocrystals into Al0.2Ga0.8N and Al0.6Ga0.4N powders via pyrolysis from an organometallic compound, followed by a nitridation process in ammonia flow at 1000 °C for two hours were obtained. X-ray diffraction patterns demonstrated a shift towards greater angles to the right for the AlGaN powders with respect to GaN powders, this shift could indicate the formation of the AlGaN powders. Scanning electron microscopy micrographs showed the obtaining from semi-plates of porous appearance for the Al0.2Ga0.8N powders until well-defined plates for the Al0.6Ga0.4N powders. High resolution transmission electron microscopy micrographs demonstrated the presence of hexagonal nanocrystals into Al0.2Ga0.8N powders with an average crystal size of 10.3 nm, while that for the Al0.6Ga0.4N powders an average crystal size of 9.7 nm was observed. UV-visible spectra showed a transmittance cut-off for the Al0.2Ga0.8N powders of 3.71 eV (334.2 nm) and a transmittance cut-off of 4.53 eV (273.7 nm) for the Al0.6Ga0.4N powders.
Highlights
In nineties the blue laser of solid state obtained by Nakamura, Akasaki and Amano [1], [2], opened the wide way of the III-Nitrides semiconductor materials
Fig. 2b), shows the x-ray diffraction pattern for Al0.2Ga0.8N powders, where the peaks correspond to the planes orientation (100), (002) and (101), which are indexed in ICCD card: 01-080-4096
The loss of definition in the Hexagonal nanocrystals of AlGaN were obtained via pyrolysis from a organometallic compound, followed by a nitridation process at 1000 °C for two hours
Summary
In nineties the blue laser of solid state obtained by Nakamura, Akasaki and Amano [1], [2], opened the wide way of the III-Nitrides semiconductor materials. This because to its application in the conservation of electrical energy through the replacement of incandescent light bulbs with LED technology bulbs [3].
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