Abstract
We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma etching. The obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars obtained under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni mask). We obtained hexagonal symmetry of SiC nanopillar, which might be attributed to the crystallographic structure of the SiC phase.
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