Hexagonal CdTe films with Te excess grown at room temperature by laser ablation

F De Moure-Flores,J.G Quiñones-Galván,A Guillén-Cervantes,J Santoyo-Salazar,A Hernández-Hernández,G Contreras-Puente,M De La L Olvera,M Meléndez-Lira

doi:10.1016/j.matlet.2012.10.056

Hexagonal CdTe films with Te excess grown at room temperature by laser ablation

F De Moure-Flores, J.G Quiñones-Galván + Show 6 more

https://doi.org/10.1016/j.matlet.2012.10.056

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Journal: Materials letters	Publication Date: Oct 22, 2012
Citations: 8

Affiliation: Center for Research and Advanced Studies of the National Polytechnic Institute

#Wavelengths Of 1064nm #Excess Of Te + Show 8 more

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Abstract

CdTe thin films were grown by laser ablation using a Nd:YAG laser at wavelengths of 1064nm and 532nm, on Corning glass substrates at room temperature. CdTe powders were used as target for deposition of the films. The growth time was 10min and the films were deposited in vacuum. X-ray diffraction shows that films have hexagonal phase. EDS analysis indicates that the films grew with excess of Te, which indicates that CdTe films have p-type conductivity.

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