Abstract
Hexagonal boron nitride (h-BN) synthesized under high pressure and high temperature (HPHT) has been used worldwide in two-dimensional (2D) materials research as an essential material for constructing van der Waals heterostructures. Here, we study h-BN synthesized with another method, i.e., via synthesis at atmospheric pressure and high temperature (APHT) using a metal alloy solvent. First, we examine the APHT h-BN in a bulk crystal form using cathodoluminescence and find that it does not have carbon-rich domains that inevitably exist in a core region of all the HPHT h-BN crystals. Next, we statistically compare the size of the crystal flakes exfoliated on a SiO2/Si substrate from APHT and HPHT h-BN crystals by employing our automated 2D material searching system. Finally, we provide direct evidence that APHT h-BN can serve as a high-quality substrate for 2D materials by demonstrating high carrier mobility, ballistic transport, and Hofstadter butterfly in graphene and photoluminescence in WS2.
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