Abstract
Boron was evaporated from an electron-gun-heated tantalum crucible and deposited as 1000 Å films onto KBr disks and polished Ti-6A1-4V cylindrical substrates. The films were then bombarded by 50 keV N 2 + ions for doses ranging from 0.5 × 10 17 to 3 × 10 17 N 2 + cm -2. The highest dose was retained for implantation at different substrate temperatures ( i.e. room temperature, 150°C, 300°C, 450°C and 600°C). The implanted films were characterized by X-ray photoelectron spectroscopy and IR and UV-visible spectroscopies. Hexagonal boron nitride formation as a function of dose and substrate temperature was studied.
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