Abstract

We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was −1.15 × 10−9 A, which was one order lower than the reference LED’s leakage current of −1.09 × 10−8 A. The h-BN layer minimizes the leakage current characteristics and operating temperature by acting as a passivation and heat dispersion layer. With a reduced working temperature of 33 from 45 °C, the LED lifetime was extended 2.5 times following h-BN passivation. According to our findings, h-BN passivation significantly improves LED reliability.

Highlights

  • Due to their low power consumption, great brightness and long lifetime, GaN-based light-emitting diodes (LEDs) have been employed in solid state lighting applications such as lamps, headlights, plant growth, and lighting communication [1]

  • We introduce hexagonal boron nitride (h-BN) as a passivation layer to improve the reliability of

  • These indicate that spectroscope with an argon ion laser (514 nm) were used to access the crystalline quality the h-BN layer has a tearing-free two-dimensional nanosheet structure

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Summary

Introduction

Due to their low power consumption, great brightness and long lifetime, GaN-based light-emitting diodes (LEDs) have been employed in solid state lighting applications such as lamps, headlights, plant growth, and lighting communication [1]. Passivation is one of the methods for reducing leakage current and increasing reliability, and insulator materials such as AlNx , SiNx , and SiO2 are commonly utilized [7,8]. Passivation of these insulating materials necessitates a plasma-enhanced chemical vapor deposition (PECVD) approach with a high temperature process. This produces poor p-type ohmic contact between metal and LED surfaces, which might result in device performance impairment during the PECVD process [6]. New technologies or materials with little effect on the device surfaces or contacts are required to achieve high LED reliability

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