Abstract
Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations revealed a two-domain film structure (AlN 1 and AlN 2) with an epitaxial orientation relationship of [0 0 0 1] AlN || [0 0 1] Si and 〈0 1 1 ̄ 0〉 AlN 1 || 〈 2 ̄ 1 1 0〉 AlN 2 || [1 1 0] Si. The epitaxial growth of single crystalline wurtzite AlN thin films has been achieved on off-axis Si(0 0 1) substrates with an epitaxial orientation relationship of [0 0 0 1] AlN parallel to the surface normal and 〈0 1 1 0〉 AlN || [1 1 0] Si.
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