Abstract
Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.
Highlights
Germanium photodetectors integrated with sub-micron silicon waveguides are essential building elements for many applications
Heterostructured silicon-germanium-silicon photodiodes with a buttwaveguide-coupling scheme and a lateral p-i-n electrical junction are promising to detect light on a silicon chip [2,3,4,5]
Heterostructured p-i-n photodiodes with silicongermanium-silicon heterojunction leverage the maturity of foundry-based silicon processes and germanium epitaxial growth
Summary
Germanium photodetectors integrated with sub-micron silicon waveguides are essential building elements for many applications. This includes sensing, health monitoring, biomedicine or optical interconnects and communications. Cross-sectional schematics and an optical microscopy image of such heterostructured p-i-n photodetectors are shown in Fig. 1a and 1b, respectively. This unique integration strategy facilitates the development of compact devices with properly engineered waveguide features. Such photodiodes benefit from improved modal confinement and overall control over the intrinsic region. Fabricated p-i-n photodiodes were operated under low-voltage ("p-i-n regime") and high-voltage ("avalanche regime") conditions, respectively, delivering high-speed and lownoise detection at a mainstream telecommunication waveband centered at 1.55 μm
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