Heterostructure MoS2@ZnO nanowires: Preparation, ultrafast nonlinear optical behavior and photoelectric functional application

Abstract

The semiconductor heterostructure was proposed and prepared by the wide-band gap zinc oxide (ZnO) and narrow-band gap molybdenum disulfide (MoS2) materials. The interlayer exciton pumping efficiency and saturable/reverse saturable nonlinear absorption (NLA) characteristics of MoS2/ZnO heterostructure can be flexibly adjusted, revealing its important potential in exploring new optoelectronic devices. In this work, based on magnetron sputtering and chemical vapor deposition, the MoS2 nanosheets, unmodified ZnO nanowires and MoS2@ZnO heterostructure were successfully synthesized. The depending relationship of the laser intensity, pulse width and wavelength on the NLA of samples has been studied using Z-scan technique. The ultrafast dynamics process was researched using two-color pump probe technology with the excitation wavelength at 325, 380 and 400 nm. The fast and slow components characters of the ultrafast electron transfer process were discussed to analyzing its producing mechanism in detail. The photoelectric functional performances and physical mechanisms are studied in theory and experiment. This paper will provide a theoretical basis and guidance for manipulation and improvement of the nonlinear optical properties in semiconductor micro/nano-material, as well as the corresponding application in optoelectronic devices.