Abstract
Based on a Kronig-Penney model the electronic properties of heteropolytypic superlattices consisting of lamellas of 3C-and 4H-SiC polytypes with thicknesses below ten nanometers are analysed. Due to the large difference in the electron negativity and the resulting high barriers between the different polytypic lamellas an increased number of minizones compared to other materials are formed. The field strength for the appearance of the negative differential resistance in the heteropolytypic superlattice is lower than the critical fields in the silicon carbide polytypes.
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