Abstract
Polycrystalline CuInxGa1−xTe2 thin films are prepared by pulsed laser evaporation. The room-temperature hole densities and mobilities of the films are determined. It is established that direct optical contact of the postgrowth surface of such films with the surface of a cleaved InSe wafer exhibits the photovoltaic effect. The spectra of the relative quantum efficiency of photoconversion of the heterojunctions are investigated as a function of the composition of the CuInxGa1−xTe2 films and the photodetection geometry. It is concluded that the fabricated heterojunctions have potential applications in photodetectors of unpolarized radiation.
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