Abstract
The second iteration of a novel semiconductor triode has been designed, fabricated and tested utilizing planar technology. The heterostructure filament of the novel device was positioned in between two ohmic contacts, which supply it with free electrons. These electrons are then picked up by the anode, which is fabricated the same way as the gate on a HEMT [S. Mil'shtein, C. Gil, ‘Semiconductor Triode’ Patent Applications, 2004]. The gate (grid) was positioned between the negative biased end of the filament and the anode contact. The grid controls the flow of electrons through the filament, and then a portion of them is collected by the anode. The anode was placed 180Å lower than the grid. Through enhanced design, the current carrying capabilities of the devices have been improved by a factor of two over the initial design.
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