Abstract
Orthorhombic HoMnO3 thin films with a-axis orientation are epitaxial grown on Nb-doped SrTiO3(110) substrate using pulsed laser deposition technique to fabricate all-oxide p-n heterojunctions. The structural, magnetic, and electrical properties of heterostructures are measured. The temperature-dependent current-voltage data from 320 to 60 K display diode-like rectifying characteristics in the as-prepared p-n junction. Furthermore, an anomalous increase in the reverse-bias current with decreasing temperature below 240 K is observed. Further analysis suggests that this anomalous electrical transport behavior could be ascribed to the Fowler-Nordheim tunneling through the junctions.
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