Abstract
Heterojunction Ge<sub><i>x</i></sub>Si<sub>1-<i>x</i></sub>/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped Ge<sub><i>x</i></sub>Si<sub>1-<i>x</i></sub> heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 μm, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x 244- and 400- x 400-element focal plane arrays consisting of Ge<sub><i>x</i></sub>Si<sub>1-<i>x</i></sub>/Si detectors with cutoff wavelength of ~10 μm and monolithic CCD readout circuitry.
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