Abstract
The fabrication and current-voltage characteristics of the depletion mode ZnSe/InP heterojunction gate field-effect transistor are described. The epilayers of the device are prepared by interrupted growth with the use of two separate metalorganic chemical vapor deposition systems. The gate leakage current and breakdown voltage of Au/ZnSe/InP are much improved. The characteristics of the field-effect transistor shows a transconductance of 9.5 ms/mm with a 2 urn gate length.
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