Heterojunction effect on contact resistance minimization in staggered pentacene thin-film transistors

Abstract

The MoO3/pentacene heterojunction is demonstrated to be effective for reducing the contact resistance in staggered organic thin-film transistors. The heterojunction-induced doping is nondestructive and may form a top conducting channel close to the pentacene surface. Contact interface doping and channel doping both significantly reduced the contact resistance. The effect of channel doping was prominent at low gate bias values, which is ascribed to the negligible access resistance owing to the presence of the top channel. Interface doping and channel doping were combined to obtain a complete heterojunction, which exhibited minimized contact resistance for a wide range of gate bias values.