Abstract
AbstractThe n‐ZnO/p‐CuO heterojunction characteristics have been investigated by direct bonding of ZnO and CuO substrates at room temperatures, and by post‐annealing at 800ºC. The ZnO substrate was fabricated by mixing of ZnO and Al2O3 (2%) powders, pressing at 50 MPa, and sintering at 1400 °C while the CuO substrate was fabricated by mixing of CuO and Li2CO3 (1%) powders, pressing at 300 MPa, and sintering at 700 °C. Rectifying behaviour with an ideality factor of 126 was observed after bonding of these substrates. Post‐annealing of the heterojunction, however, significantly increased both the forward and the reverse currents, and the rectifying behaviour was lost. Symmetrical I‐V curves with threshold voltages of about ± 1 V were observed and this degradation could be explained by impurity (Al and Li) segregation at the junction interface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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