Abstract
A β-Ga2O3 film was directly bonded on a diamond substrate at 250ºC under atmospheric conditions. Before bonding, the β-Ga2O3 surface was activated by oxygen plasma irradiation, while the diamond surface was cleaned with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3anddiamond surfaces adhered to one another under atmospheric conditions. By annealing the contacted specimen at 250ºC, they formed atomic bonds without voids, cracks, or severe crystallinity damages. It is believed that the direct bonding of β-Ga2O3 and diamond can facilitate the ultra-wide bandgap power electronics.
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