Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

Lishu Wu,Cheng Wei,Tangshen Chen,Jiayun Dai,Yuechan Kong,Tong Zhang

doi:10.1109/edtm50988.2021.9420880

Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

Lishu Wu, Cheng Wei + Show 4 more

https://doi.org/10.1109/edtm50988.2021.9420880

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Publication Date: Apr 8, 2021

Citations: 1

Affiliation: Southeast University

#Si CMOS #InP DHBTs + Show 6 more

Abstract
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Abstract

In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS wafer. Meanwhile, we exhibit a InP-on-Si CMOS 14Gbps 1:16 demultiplexer as example, which shows the potential to integrate InP and Si CMOS on the same chip to take advance of the two different material systems.

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