Heterogeneously integrated quantum-dot emitters efficiently driven by a quasi-BIC-supporting dielectric nanoresonator

Abstract

Bound states in the continuum (BICs) can make subwavelength dielectric resonators sustain low radiation leakage, paving a new way to minimize the device size, enhance photoluminescence, and even realize lasing. Here, we present a quasi-BIC-supporting GaAs nanodisk with embedded InAs quantum dots as a compact bright on-chip light source, which is realized by heterogeneous integration, avoiding complex multilayered construction and subsequent mismatch and defects. The emitters are grown inside the nanodisk to match the mode field distribution to form strong light–matter interaction. One fabricated sample demonstrates a photoluminescence peak sustaining a quality factor up to 68 enhanced by the quasi-BIC, and the emitting effect can be further promoted by improving the epilayer quality and optimizing the layer-transferring process in the fabrication. This work provides a promising solution to building an ultracompact optical source to be integrated on a silicon photonic chip for high-density integration.