Abstract
Lithium niobate thin film represents as an ideal material substrate for quantum photonics due to its strong electro-optic effect and high-speed modulation capability. Here, we propose a novel platform which heterogeneously integrates single self-assembled InAs/GaAs quantum dots for a single-photon source on a lithium niobate photonic chip. The InAs/GaAs quantum dots can be transferred to the lithium niobate waveguide via a substrate transfer procedure with nanometer precision and be integrated through van der Waals force. A down-tapered structure is designed and optimized to deliver the photon flux generated from the InAs quantum dots embedded in a GaAs waveguide to the lithium niobate waveguide with an overall efficiency of 42%. In addition, the electro-optical effect is used to tune, and therefore to tune the beam splitting ratio of the integrated lithium niobate directional coupler, which can simultaneously route multiple photons to different spatial modes, and subsequently fan out through grating couplers to achieve single-photon sub-multiplexing. The proposed device opens up novel opportunities for achieving multifunctional hybrid integrated photonic chips.
Highlights
In order to further boost the outcome of a single photon emitting device, and to overcome the limits constrained by a single quantum dot, there is an inevitable trend, at present, to establish optical quantum chips containing hybrid and multifunctional quantum systems
LiNbO3 material, cannot be directly used as a photon source, and a hybrid integration technique is required to achieve the goal. We address this issue via proposing a novel heterogeneous integration platform in which single self-assembled InAs/GaAs quantum dots is transferred to the surface of a lithium niobate thin-film waveguide [26]
GaAs waveguide with circular holes at one end is transferred to the surface of the LiNbO3 thin-film waveguide by a substrate transferring technique [20] and the heterogeneous integration is formed by Van Der Waals is force
Summary
Academic Editors: Bing-Yan Wei, Peng Chen, Haiwei Chen, Miao Jiang and Wan-Long Zhang. Lithium niobate (LiNbO3 ) thin-film waveguides have recently been characterized by their low loss, fast electro-optical response, and high nonlinear coefficient [21,22,23,24,25] They have been used to construct passive photonic chips with electro-optical modulation or nonlinear frequency conversion. LiNbO3 material, cannot be directly used as a photon source, and a hybrid integration technique is required to achieve the goal We address this issue via proposing a novel heterogeneous integration platform in which single self-assembled InAs/GaAs quantum dots is transferred to the surface of a lithium niobate thin-film waveguide [26]. In [27,28,29], only the laser source was reported and integrating other structures, the full integration, and optimization strategies of the entire chips have not been reported before
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