Abstract

This paper introduces a resonant waveguide grating (RWG) integrated with a photodetector for on-chip sensing applications. An inverted thin film indium gallium arsenide (InGaAs) metal–semiconductor–metal photodetector is heterogeneously integrated on silicon dioxide (SiO2)/ silicon substrate using fluidic self-assembly. The inverted optical waveguide and the RWG structure are subsequently fabricated utilizing layer-by-layer post-processing techniques. Detailed electrical, optical, and optoelectronic characterization were performed to analyze the functionality of the sensing platform. This approach can open new avenues allowing the development of low-cost complementary metal-oxide semiconductor compatible integrated optical sensors.

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