Heterogeneous silicon crystal growth on a single crystal silicon wafer by a molten silicon spraying deposition method

Abstract

Using a new process, a polycrystalline silicon layer has been grown directly from molten Si at a rate 100 times faster than using a conventional CVD process. This has been achieved on a single Si wafer on which V grooves had been etched on an oxide layer. Thicknesses of 100–1000 μm and a grain sizes of 10–100 μm were controllably obtained. After the growth of the polycrystalline layer, dislocation densities of 2.0×10 5 cm -2 were found in the single crystal substrate and 2.8×10 5 cm -2 in the polycrystalline layer. A substrate with these dislocation densities is sufficient to use for dielectrically isolated (DI) substrates.