Abstract
In this paper we continue to model the formation of new phases in silicon after implantation of reactive ions. We generalize our foregoing investigation, and now two different reactive species of similar chemical characteristics are considered. New phase inclusions grow as a result of the impurity diffusion to a distributed sink. This consists of spherical nuclei which have a complex chemical composition and do not touch each other. The numerical results of this model agree with the experimental data, obtained by Auger depth profiling only if we introduce the dependence of the diffusion coefficients of the reactive impurities on the matrix imperfection.
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