Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres

Abstract

The presence of oxygen precipitates in the region, where devices will be created, negatively affects the parameters of created structures1 and therefore, these regions must be free of precipitates. Using a heterogeneous mechanism of precipitation, it is possible to control the distribution of the precipitates in the crystal. Blums and Medvid’2 reported a generation of additional centres in silicon during the laser annealing without introduction of any additional impurity. One part of generated centres is stable up to 650–670° C, and their concentration rises with a rise in oxygen concentration in silicon. The aim of this work is an investigation of opportunity to use the above mentioned laser-induced centres as nuclei for silicon oxide (SiO2) precipitation.